Instrument Details
Features
- Up to 3” wafers, vacuum, ambient partial pressure or atmospheric pressure annealing
- Temperature: 25 – 1000°C with PC control
- Gases: O2, Ar, N2
- Rapid thermal annealing (RTA) for silicon & III-V semiconductors
- Rapid thermal oxidation (RTO)
- Rapid thermal nitridation (RTN)
- Rapid thermal diffusion (RTD) using spin-on dopants
- Crystallization of thin films, contact alloying, ion implant activation and densification of deposited films.
