Instrument Details
Features
- Touch screen panel for parameter control, recipe entry and storage
- Process wafers up to 8″ in diameter
- RF Power: 13.56 MHz, 300 Watts
- Process Gases: H2, O2, Ar, CH4, CF4, N2
- Argon sputter etch
- Etching of : SiO2, Si3N4, Si, GaAs, InP, organic materials
