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Deep Reactive Ion Etcher (DRIE) – Samco 400iPB

Instrument Details

Features

  • Samco 400iPB is for the deep reactive ion etching of Si and SiO2
  • 4” electrostatic chuck with helium backside cooling
  • Bosch process license for Si
  • Silicon Processes: Smooth sidewall (scallop<200 nm), small trench (2-5um wide), and fast etch rate (>8-11 micron/min for wide trenches)
  • SiO2 etch rate >120nm/min
  • Easy touchscreen operation with process recipes that include substrate loading and unloading
  • Gases: C4F8, SF6, O2, Ar, He

Deep Reactive Ion Etcher (DRIE) – Samco 400iPB photo

NUcore RESERVATION

Facility Contact

Main Contact: Shaoning Lu, PhD 
Office: Tech, #FG71
847- 491-3853 / email

Alternate Contact: Dr. Nasir Basit
(847)-467-6201 / email

Location

Technological Institute FG70